Selective area epitaxy of GaN for electron field emission devices

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

B.P. Keller, S. Keller, D. Kapolnek et al. · Journal of Electronic Materials · 1995 · 98 citations

Engineering, Materials Engineering, Materials Science +16