γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1997 · 242 citations

Engineering, Electrical Engineering, Materials Science +17

The crystal structure and anomalous dispersion of γ-LiAlO₂

M. Marezio · Acta Crystallographica · 1965 · 232 citations

Natural Sciences, Chemistry, Physics +11

Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates

Patrick Kung, A. Saxler, X. Zhang et al. · Applied Physics Letters · 1996 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17