Applied Physics Letters · 1996 · 65 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSemiconductor MaterialsThin FilmsChemical Vapor DepositionSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Optical PropertiesThin-film DepositionHall EffectHall Effect MeasurementsMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionOptical PropertiesOptical TransmissionTemperature-dependent GrowthX-ray Diffraction Analysis
We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence.