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Process integration of a 27nm, 16Gb Cu ReRAM

54

Citations

4

References

2014

Year

Abstract

A 27nm 16Gb Cu based NV Re-RAM chip has been demonstrated. Novel process introduction to enable this technology include a Damascene Cell, Line-SAC Digit Lines filled with Cu, exhumed-silicided array contacts, raised epitaxial arrays, and high-drive buried access devices.

References

YearCitations

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