R. Fackenthal

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

R. Fackenthal, Makoto Kitagawa, Wataru Otsuka et al. · 2014 · 213 citations

Engineering, Computer Engineering, Electrical Engineering +14

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · Solid-State Electronics · 2008 · 23 citations

Engineering, Electrical Engineering, Materials Science +11

Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · 2007 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 90nm 512mb 166MHz multilevel cell flash memory with 1.5MByte/s programming

M. Taub, R. Bains, G. Barkley et al. · 2005 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +17