Wataru Otsuka

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

R. Fackenthal, Makoto Kitagawa, Wataru Otsuka et al. · 2014 · 212 citations

Hardware Security, High Density, Electrical Engineering +15

Process integration of a 27nm, 16Gb Cu ReRAM

J. Zahurak, Koji Miyata, Mark H. Fischer et al. · 2014 · 54 citations

Materials Science, Electrical Engineering, Wafer Scale Processing +13

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

Tetsuya Yamamoto, Hiroshi Kano, Y. Higo et al. · Journal of Applied Physics · 2005 · 32 citations

Non-volatile Memory, Engineering, Asteroid Mram +16

A cross point Cu-ReRAM with a novel OTS selector for storage class memory applications

Shuichiro Yasuda, Kazuhiro Ohba, Tetsuya Mizuguchi et al. · 2017 · 29 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +14