A cross point Cu-ReRAM with a novel OTS selector for storage class memory applications

Abstract

This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns program speed and 10M cycles of program endurance. One is tight resistance distributions of Cu-ReRAM by inserting a barrier layer to prevent excess intermixing. The other is a novel Boron and Carbon (BC) based Ovonic Threshold Switch (OTS) selector which meets requirements for large cross point arrays with low leakage current, low threshold voltage variability, and high endurance.