A copper ReRAM cell for Storage Class Memory applications

Abstract

Hybrid memory systems that incorporate Storage Class Memory (SCM) as non-volatile cache or DRAM data backup are expected to bolster system efficiency and cost because SCM promises higher density than DRAM cache and higher speed than the storage I/F. This paper demonstrates a Cu-based resistive random access memory (ReRAM) cell that meets the SCM performance specifications for a 16Gb ReRAM with 200MB/s write and 1GB/s read [1].