Concepedia

Alessandro Torsi

AT

Statistics

Publications

4

Citations

271

H-Index

4

Active since

2010

Affiliations

Micron (United States)(Current)

Intel (United States)

Alessandro Torsi is an author at Micron (United States) specializing in engineering, computer engineering, and memory subsystem design.

Publications per year

2010–2023

4

Publications

4

NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

Nirmal Ramaswamy, Alessandro Calderoni, J. Zahurak et al. · 2023 · 110 citations

Engineering, Computer Engineering, Electrical Engineering +17

Process integration of a 27nm, 16Gb Cu ReRAM

J. Zahurak, Koji Miyata, Mark H. Fischer et al. · 2014 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

G. Marotta, A. Macerola, Antonino D’Alessandro et al. · 2010 · 53 citations

Engineering, Computer Engineering, Computer Science +17

A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

Alessandro Torsi, Yijie Zhao, Haitao Liu et al. · IEEE Transactions on Electron Devices · 2010 · 53 citations

Engineering, Computer Engineering, Electrical Engineering +17

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