Publication | Closed Access
A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s
52
Citations
4
References
2010
Year
Unknown Venue
Non-volatile MemoryEngineeringNew Quad-plane ArchitectureEmerging Memory TechnologyComputer ArchitectureProgram ThroughputNand Flash MemoryParallel ComputingElectrical EngineeringFlash MemoryComputer EngineeringComputer ScienceMicroelectronicsProgramming ThroughputMemory ArchitectureNand-flash MemorySemiconductor MemoryTechnologyBlocks Configuration Mode
A 3.3V 32Gb NAND-Flash memory with 3b/cell is demonstrated in 34nm technology. The device features a programming throughput of 6MB/s on blocks configured as 3b/cell mode and can dynamically switch up to 13MB/s in 2b/cell mode. A new quad-plane architecture and an optimized programming algorithm are adopted to achieve the design targets.
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