2010 · 53 citations · 4 references
EngineeringComputer EngineeringComputer ScienceComputer ArchitectureLow-power DesignMicroelectronicsMemory DevicesMemory HierarchyMemory Hierarchy DesignMemory Hierarchy OptimizationMemory Subsystem DesignMicroarchitecture DesignDie ArchitectureFlash MemoryFlash Memory DevicesMemory Cell DesignMemory Circuit DesignNand Flash MemoryReconfiguration ThroughputThroughput
A 3.3V 32Gb NAND-Flash memory with 3b/cell is demonstrated in 34nm technology. The device features a programming throughput of 6MB/s on blocks configured as 3b/cell mode and can dynamically switch up to 13MB/s in 2b/cell mode. A new quad-plane architecture and an optimized programming algorithm are adopted to achieve the design targets.
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A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate
Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 47 citations · Full text
A 113mm2 32Gb 3b/cell NAND flash memory
T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa et al. · 2009 · 37 citations
Engineering, Computer Engineering, Electrical Engineering +16