IEEE Electron Device Letters · 2013 · 37 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsThin-film TransistorsAmorphous Thin FilmsCoupling FactorCurrent-voltage RelationsCurrent-voltage RelationshipDensity Of StatesSubthreshold OperationSurface PotentialSurface Potential Measurement
We report a unified subthreshold coupling factor technique for a simultaneous extraction of the surface potential (ψ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> ) and the subgap density-of-states [DOS: g(E)] over the bandgap in amorphous semiconductor thin film transistors (TFTs). It is fully based on the experimental gate bias-dependent coupling factor [m(V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> )] under subthreshold bias. Through the proposed technique only with current-voltage data under subthreshold operation, a unified extraction of the DOS with a consistent mapping of the gate bias (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> ) to the subgap energy is obtained. Applying to amorphous InGaZnO TFTs, g(E) is obtained to be a superposition of two exponential functions with N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TA</sub> = 1.62 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> and kT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TA</sub> = 0.026 eV for the tail states while N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DA</sub> = 6.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> and kT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DA</sub> = 0.22 eV for the deep states.
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Trap densities in amorphous-InGaZnO4 thin-film transistors
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