Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Concepts

Materials ScienceDevice ModelingElectrical EngineeringSemiconductor TechnologyEngineeringElectronic MaterialsSubgap DensityMultifrequency Capacitance–voltage CharacteristicsApplied PhysicsExponential Tail StatesSemiconductor MaterialExtraction TechniqueThin Film Process TechnologyThin FilmsThin Film ProcessingSemiconductor Device

Abstract

An extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitance-voltage ( C - V ) characteristics is proposed and verified by comparing the measured I - V characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters. It takes on the superposition of exponential tail states and exponential deep states with characteristic parameters for N TA = 1.1 × 10 17 cm -3 · eV -1 , N DA = 4 × 10 15 cm -3 · eV -1 , kT TA = 0.09 eV, and kT DA = 0.4 eV. The proposed technique allows obtaining the frequency-independent C - V curve, which is very useful for oxide semiconductor TFT modeling and characterization, and considers the nonlinear relation between the energy level of DOS and the gate voltage V GS . In addition, it is a simple, fast, and accurate extraction method for DOS in amorphous InGaZnO TFTs without optical illumination, temperature dependence, and numerical iteration.

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