IEEE Electron Device Letters · 1988 · 32 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceFault-tolerant ComputingMicroelectronicsDefects In Electronic MaterialsDevice ReliabilityMemory DevicesMemory Subsystem DesignRadiation Damage In MaterialsSemiconductor ReliabilityDynamic Random-access MemoryRadiation Effects On ReliabilityRadiation-hard DevicesRadiation-hardened Memory DevicesRandom-access MemoryReliability DegradationSoft Error ReliabilitySoft Errors
A novel component of dynamic random-access memory (DRAM) soft error, in addition to the previously known cell-failure component and the bit-line failure component, is reported. The error component, named the combined cell-bit line (CCB) failure mode, occurs when the cell and the bit line each collect radiation-induced charge which are individually insufficient to upset the cell, but which does cause an error in combination. Experimental results covering the three soft-error rate (SER) components (cell, bit line, and CCB) have been obtained using an Americium-241 source, over a wide range of cycle times from 75 ns to 30 mu s. The study indicates that, at short cycle times, CCB failure mode can dominate SER in high-density, high-speed dynamic memories.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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An Experimental 16mb Dram with Transposed Data-Line Structure
A 16mb Dram with an Open Bit-Line Architecture