Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.7K citations

White Oled, Electrical Engineering, Electronic Devices +14

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Materials Engineering, Materials Science, Electrical Engineering +15

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Japanese Journal of Applied Physics · 1991 · 432 citations

Materials Engineering, Materials Science, Electrical Engineering +10

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Aluminium Nitride, Engineering, Crystal Qualities +16