Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire

Xing Yang, T. J. Schmidt, J. J. Song et al. · Applied Physics Letters · 1995 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +17

Periodic mass shedding of a retracting solid film step

Harris Wong, Peter W. Voorhees, Michael J. Miksis et al. · Acta Materialia · 2000 · 135 citations

Natural Sciences, Physics, Condensed Matter Physics +4

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

Jean‐Michel Hartmann, L. Clavelier, C. Jahan et al. · Journal of Crystal Growth · 2004 · 66 citations

Engineering, Electrical Engineering, Materials Science +14

Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure

Ratno Nuryadi, Yasuhiko Ishikawa, M. Tabe · Applied Surface Science · 2000 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +16

Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum

Ratno Nuryadi, Yasuhiko Ishikawa, Yukinori Ono et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 61 citations

Natural Sciences, Materials Science, Physics +17