Yasuhiko Ishikawa

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, D.D. Cannon et al. · Applied Physics Letters · 2003 · 385 citations

Engineering, Direct Band Gap, Optoelectronic Devices +17

Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

Jifeng Liu, D.D. Cannon, Kazumi Wada et al. · Applied Physics Letters · 2005 · 224 citations

Optical Materials, Engineering, Optoelectronic Devices +20

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Jifeng Liu et al. · Journal of Applied Physics · 2005 · 167 citations

Si Substrate, Optical Materials, Engineering +20

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in <i>L</i>-band telecommunications

D.D. Cannon, Jifeng Liu, Yasuhiko Ishikawa et al. · Applied Physics Letters · 2004 · 149 citations

Optical Materials, Engineering, Potential Application +18

Precise Measurement Method for Temperature Coefficient of Microwave Dielectric Resonator Material

Toshio Nishikawa, K. Wakino, Hiroshi Tamura et al. · 1987 · 99 citations

Electrical Engineering, Engineering, Measurement +12