D.D. Cannon

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, D.D. Cannon et al. · Applied Physics Letters · 2003 · 390 citations

Engineering, Materials Engineering, Materials Science +17

High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

Jifeng Liu, Jürgen Michel, Wojciech Giziewicz et al. · Applied Physics Letters · 2005 · 238 citations

Engineering, Electrical Engineering, Materials Science +17

Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

Jifeng Liu, D.D. Cannon, Kazumi Wada et al. · Applied Physics Letters · 2005 · 227 citations

Engineering, Electrical Engineering, Materials Science +17

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Jifeng Liu et al. · Journal of Applied Physics · 2005 · 170 citations

Engineering, Materials Engineering, Materials Science +17

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in <i>L</i>-band telecommunications

D.D. Cannon, Jifeng Liu, Yasuhiko Ishikawa et al. · Applied Physics Letters · 2004 · 153 citations

Natural Sciences, Materials Engineering, Materials Science +17