Publication | Closed Access
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
65
Citations
30
References
2004
Year
Electrical EngineeringEpitaxial GrowthSelective Epitaxial GrowthEngineeringApplied PhysicsSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorMicroelectronicsPhosphorus-doped Si
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