Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy

Gas source MBE of InP and Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i> : Materials properties and heterostructure lasers

M. B. Panish, H. Temkin, S. Sumski · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 129 citations

Optical Materials, Engineering, Laser Applications +19

Doping of GaAs in metalorganic MBE using gaseous sources

H. Heinecke, K. Werner, M. Weyers et al. · Journal of Crystal Growth · 1987 · 44 citations

Electrical Engineering, Engineering, Applied Physics +4

Doping studies using thermal beams in chemical-beam epitaxy

W. T. Tsang, B. Tell, J. A. Ditzenberger et al. · Journal of Applied Physics · 1986 · 40 citations

Engineering, Semiconductor Materials, Semiconductor Device +16

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

D. A. Andrews, S.T. Davey, C. G. Tuppen et al. · Applied Physics Letters · 1988 · 32 citations

Optical Materials, Engineering, Crystal Growth Technology +16

Silicon doping from disilane in gas source MBE of GaAs

Katsutoshi KIMURA, Seishi Horiguchi, Koichi Kamon et al. · Journal of Crystal Growth · 1987 · 24 citations

Semiconductor Technology, Electrical Engineering, Engineering +6