A low-temperature process for annealing extremely shallow As+-implanted <i>n</i>+/<i>p</i> junctions in silicon

Abstract

A new low-temperature process that anneals out ion-implantation damage and activates the dopant in extremely shallow, implanted n+/p structures is presented. This technique employs low-energy (0.4 keV) H+ ion implantation following arsenic ion implantation and then a subsequent low-temperature (500–600 °C) furnace anneal. Very little dopant redistribution takes place with this new process and the device characteristics are comparable to other processes employing short-time, higher-temperature anneals.