Current Status of Ferroelectric Random-Access Memory

Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance

Shigeki Sakai, R. Ilangovan · IEEE Electron Device Letters · 2004 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

Eisuke Tokumitsu, Gen Fujii, Hiroshi Ishiwara · Applied Physics Letters · 1999 · 138 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

Y.M. Kim, M. Dahlstrǒm, Sang‐Ho Lee et al. · IEEE Electron Device Letters · 2002 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Properties of Ferroelectric Memory FET Using Sr₂(Ta, Nb)₂O₇ Thin Film

Yoshikazu Fujimori, Takashi Nakamura, Akira Kamisawa · Japanese Journal of Applied Physics · 1999 · 64 citations

Engineering, Materials Engineering, Materials Science +17

Ferroelectric DRAM (FEDRAM) FET with metal/SrBi ₂ Ta ₂ O/sub 9//SiN/Si gate structure

Kwang Ho Kim, Jin‐Ping Han, Soon‐Won Jung et al. · IEEE Electron Device Letters · 2002 · 58 citations

Engineering, Electrical Engineering, Materials Science +10