Concepedia

Non-volatile Ferroelectric Memory

Non-Volatile Ferroelectric Memory is a type of semiconductor memory device that utilizes the spontaneous and reversible polarization of ferroelectric materials to store data persistently without power, enabling fast read/write operations and high endurance.

260

Publications

15.2K

Citations

1.3K

Authors

293

Institutions

Publications per year

2017–2026

98

Variants

FeramFerroelectric RamFerroelectric Random Access Memory

Parents

Publications

260

Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

A. K. Tagantsev, Igor Stolichnov, Enrico Colla et al. · Journal of Applied Physics · 2001 · 596 citations · Full text

, , +15

Review and perspective on ferroelectric HfO2-based thin films for memory applications

Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick et al. · MRS Communications · 2018 · 557 citations · Full text

, , +14

Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories

Zhijun Hu, Mingwen Tian, Bernard Nysten et al. · Nature Materials · 2008 · 543 citations

, , +16

Critical Role of Interlayer in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FET Nonvolatile Memory Performance

Kai Ni, Pankaj Sharma, Jianchi Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 432 citations

, , +13

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou, Jin Xu, Qing Li et al. · Applied Physics Letters · 2013 · 398 citations

, , +16

1–5 of 260

Authors

1.3K

  1. TM
    Thomas Mikolajick

    NaMLab (Germany), Germany

    11 publications · 1.2K citations

    11

    h-index

  2. CP
    Cheolmin Park

    Yonsei University, South Korea

    13 publications · 722 citations

    11

    h-index

  3. SS
    Stefan Slesazeck

    NaMLab (Germany), Germany

    8 publications · 485 citations

    8

    h-index

  4. IB
    Insung Bae

    Yonsei University, South Korea

    8 publications · 589 citations

    8

    h-index

  5. SY
    Shimeng Yu

    Georgia Institute of Technology, United States

    8 publications · 421 citations

    8

    h-index

1–5 of 1.3K

Institutions

293

  1. Yonsei University

    Seoul, South Korea

    14 h-index

    72 publications

    4.3K citations

  2. Chinese Academy of Sciences

    Beijing, China

    12 h-index

    68 publications

    3.7K citations

  3. NaMLab (Germany)

    Dresden, Germany

    11 h-index

    43 publications

    4.5K citations

  4. Technische Universität Dresden

    Dresden, Germany

    9 h-index

    13 publications

    1.8K citations

  5. Georgia Institute of Technology

    Atlanta, United States

    9 h-index

    37 publications

    1.9K citations

  6. Fudan University

    Shanghai, China

    8 h-index

    36 publications

    2.3K citations

  7. Panasonic (Japan)

    Kadoma, Japan

    7 h-index

    64 publications

    2.2K citations

  8. Nanjing University

    Nanjing, China

    6 h-index

    18 publications

    828 citations

1–8 of 293

Venues

  1. Applied Physics Letters

    23 publications · 1.6K citations

    18

    h-index

  2. IEEE Electron Device Letters

    15 publications · 805 citations

    15

    h-index

  3. Integrated ferroelectrics

    17 publications · 450 citations

    14

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 8 publications · 266 citations

    8

    h-index

  5. Organic Electronics

    6 publications · 103 citations

    6

    h-index

1–5