Erbium implanted thin film photonic materials

Albert Polman

Journal of Applied Physics

Optical MaterialsOptical TechnologiesEngineeringLuminescent GlassSemiconductor Materials +22

Optically active erbium centers in silicon

H. Przybylińska, W. Jantsch, Yu. Suprun-Belevitch, +5

Physical review. B, Condensed matter

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Electrical and optical characterization of Er-implanted Si: The role of impurities and defects

F. Priolo, S. Coffa, G. Franzò, +3

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesOptical CharacterizationLuminescence Property +20

Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance

S. Coffa, G. Franzò, F. Priolo

MRS Bulletin

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Incorporation and optical activation of erbium in silicon using molecular beam epitaxy

R. Serna, Jung H. Shin, M. Lohmeier, +3

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesChemistrySilicon On Insulator +17

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

W.-X. Ni, K. B. Joelsson, Congju Du, +6

Applied Physics Letters

EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductorsElectronic Devices +14

Different Er centres in Si and their use for electroluminescent devices

W. Jantsch, S. Lanzerstorfer, L. Palmetshofer, +1

Journal of Luminescence

Electrical EngineeringDifferent Er CentresEngineeringPhysicsElectroluminescent Devices +8

The Physics and Application of Si:Er for Light Emitting Diodes

Jürgen Michel, Fang Ren, Bo Zheng, +3

Materials science forum

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Heavily doped Si layers grown by molecular beam epitaxy in vacuum

Victor P. Kuznetsov, Andrei Andreev, O. A. Kuznetsov, +3

physica status solidi (a)

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Erbium–silicon light-emitting diodes grown by molecular beam epitaxy: optical properties

J. Stimmer, A. Reittinger, Esra Neufeld, +4

Thin Solid Films

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