Heavily doped Si layers grown by molecular beam epitaxy in vacuum

Abstract

Regularities of impurity accumulation on the surface of (001) Si layers during MBE are studied. As sources of Si vapor and doping impurities (P, Sb, As, Al), Si wafers doped with these impurities are used. The temperature of epitaxy is T = 500 to 770 °C, and the growth rate v = 0.2 to 5 μ/h. The width of the transition regions caused by impurity accumulation is found to decrease sharply with increasing v or lowering T. At T = 500 to 600 °C, a wide range of growth rates (v > 0.5 to 1 μ/h) exists where accumulation of P, Sb or Al impurities is absent. For the first time monocrystalline Si layers are obtained doped with P, As, Sb up to 2 × 1020 cm−3 and with Al up to 1.5 × 1019 cm−3 without stimulating effects. [Russian Text Ignored].