Victor P. Kuznetsov - Concepedia

Author

Victor P. Kuznetsov

Institute for Physics of Microstructures ORCID

Also Known As

A. Klyuchenko, Eberhard Schmid, Kuznetsov, V.P., Kuznetsov, Viktor, Kuznetsov, Viktor Petrovich, Materials Science International Team, MSIT ®, Materials Science International Team, MSIT®, V Kuznetsov, V P Kuznetsov, V. Kuznetsov

276

Publications

849

Citations

H-Index

Concepts

All Affiliations

Institute for Physics of Microstructures Yaroslav-the-Wise Novgorod State University Physico-Technical Institute Radiophysical Research Institute Saratov State University

About

Victor P. Kuznetsov is an author at Institute for Physics of Microstructures specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	167
2	Applied Physics	7	7	132
3	Business	1	1	17
4	Management	1	1	17
5	Natural Sciences	1	1	14

Victor P. Kuznetsov

Publications

197

Citations

H-Index

Page 1

	Year	Citations
Optical Er-doping of Si during sublimational molecular beam epitaxy B. A. Andreev, Andrei Andreev, H. Ellmer, Journal of Crystal Growth Optical MaterialsEngineeringOptical PropertiesApplied PhysicsMolecular Beam Epitaxy	1999	26
Low temperature spike anneal for Ni-silicide formation A. Lauwers, J. A. Kittl, Mark van Dal, Microelectronic Engineering EngineeringApplied PhysicsCondensed Matter PhysicsSiliceneNi-silicide Formation	2004	24
Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications Z. F. Krasilnik, B. A. Andreev, D. I. Kryzhkov, Journal of materials research/Pratt's guide to venture capital sources PhotonicsElectrical EngineeringPhotoluminescenceEngineeringOptical Properties	2006	19
Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures Victor P. Kuznetsov Semiconductors	2000	18
Implementation of dual-direction SCR devices in analog CMOS process Victor P. Kuznetsov, P. Hopper Electrical EngineeringEngineeringVlsi DesignPositive Feedback MechanismCircuit System	2007	18
Heavily doped Si layers grown by molecular beam epitaxy in vacuum Victor P. Kuznetsov, Andrei Andreev, O. A. Kuznetsov, physica status solidi (a) Materials ScienceSemiconductorsElectrical EngineeringImpurity AccumulationEngineering	1991	18
Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy B. A. Andreev, V. Yu. Chalkov, O. B. Gusev, Nanotechnology EngineeringOptoelectronic DevicesElectroluminescent SiSmbe MethodSilicon On Insulator	2002	17
Organizational Design and Rationalization of Production Systems of a Machine-Building Enterprise (by the Example of the Contract Assembly Workshop) Victor P. Kuznetsov, Ekaterina P. Garina, Elena V. Romanovskaya, Production PlanningIndustrial DesignProduction SystemsMachine-building EnterpriseEngineering	2017	17
Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions Gamini Ariyawansa, M. B. M. Rinzan, S. G. Matsik, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSi Dual-band Detector	2006	14
Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method B. A. Andreev, V. B. Shmagin, Z. F. Krasilnik, Thin Solid Films Electrical EngineeringOptical MaterialsEngineeringPhysicsOptical Properties	2000	14

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