Mark van Dal

Ni- and Co-based silicides for advanced CMOS applications

J. A. Kittl, A. Lauwers, O. Chamirian et al. · Microelectronic Engineering · 2003 · 114 citations

Engineering, Materials Engineering, Materials Science +13

Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Geert Eneman, D.P. Brunco, Liesbeth Witters et al. · 2012 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Thickness scaling issues of Ni silicide

O. Chamirian, J. A. Kittl, A. Lauwers et al. · Microelectronic Engineering · 2003 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +7

Applications of Ni-based silicides to 45 nm CMOS and Beyond

J. A. Kittl, A. Lauwers, O. Chamirian et al. · MRS Proceedings · 2004 · 25 citations

Engineering, Electrical Engineering, Materials Science +13

Low temperature spike anneal for Ni-silicide formation

A. Lauwers, J. A. Kittl, Mark van Dal et al. · Microelectronic Engineering · 2004 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +5