Concepedia

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

Z. F. Krasilnik, B. A. Andreev, D. I. Kryzhkov, L. V. Krasilnikova, Victor P. Kuznetsov, D. Yu. Remizov, V. B. Shmagin, Artem N. Yablonskiy, Tom Gregorkievicz, N. Q. Vinh,

Journal of materials research/Pratt's guide to venture capital sources · 2006 · 19 citations · 9 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOptical SourcesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor LasersDevice FabricationHeterostructure OptoelectronicsLight-emitting DevicesLight-emitting MaterialsRare-earth-doped Luminescent MaterialsSemiconductor Light-emitting MaterialsSilicon Optical Properties

References

9

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

Engineering, Materials Engineering, Materials Science +15

Photon Emission from Avalanche Breakdown in Silicon

A. G. Chynoweth, K. G. McKay · Physical Review · 1956 · 477 citations

Engineering, Materials Science, Physics +17

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

H. Ennen, Gernot S. Pomrenke, A. Axmann et al. · Applied Physics Letters · 1985 · 347 citations

Engineering, Materials Engineering, Materials Science +17

Different Er centres in Si and their use for electroluminescent devices

W. Jantsch, S. Lanzerstorfer, L. Palmetshofer et al. · Journal of Luminescence · 1998 · 38 citations

Engineering, Materials Engineering, Materials Science +10

Energy Transfer in Rare-Earth-Doped III-V Semiconductors

Kenichiro Takahei, Akihito Taguchi · Materials science forum · 1992 · 37 citations · Full text

Engineering, Materials Engineering, Materials Science +14