W. Jantsch - Concepedia

Author

W. Jantsch

Johannes Kepler University of Linz

Also Known As

Jantsch, W., Jantsch, Wolfgang, W Jantsch, W. JANTSCH, W. Jantsch

157

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Johannes Kepler University of Linz Polish Academy of Sciences Institute of Physics Max Planck Institute for Solid State Research University of Surrey

About

W. Jantsch is an author at Johannes Kepler University of Linz specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	37	1.2K
2	Applied Physics	20	36	1.1K
3	Natural Sciences	8	8	264
4	Chemistry	5	5	170
5	Medicine	1	1	56

W. Jantsch

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Optically active erbium centers in silicon H. Przybylińska, W. Jantsch, Yu. Suprun-Belevitch, Physical review. B, Condensed matter Ii-vi SemiconductorPhotonicsPhotonic DeviceOptical MaterialsEr Complex Centers	1996	213
Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N A. Bonanni, M. Sawicki, Thibaut Devillers, Physical Review B Magnetic PropertiesEngineeringDilute Magnetic InsulatorLocalized SpinsMagnetic Resonance	2011	73
Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template Gang Chen, H. Lichtenberger, G. Bauer, Physical Review B	2006	72
Suppression of spin relaxation of conduction electrons by cyclotron motion Ż. Wilamowski, W. Jantsch Physical Review B Relaxation ProcessMagnetismQuantum ScienceSpintronicsEngineering	2004	66
Characterization of deep levels in CdTe by photo-EPR and related techniques W. Jantsch, G. Hendorfer Journal of Crystal Growth Deep LevelsEngineeringElectron MicroscopyMicroscopyMicroscopy Method	1990	56
Deep donor levels due to isolated Fe in CdTe K. Lischka, G. Brunthaler, W. Jantsch Journal of Crystal Growth EngineeringMetalloproteinCondensed Matter PhysicsDeep Donor LevelsPhysical Chemistry	1985	54
On the local structure of optically active Er centers in Si H. Przybylińska, G. Hendorfer, Martin Brückner, Applied Physics Letters Optical MaterialsLocal StructureEngineeringHigh ResolutionInterstitial Erbium	1995	51
Deep levels in semiconductors: A quantitative criterion W. Jantsch, K. Wünstel, Osamu Kumagai, Physical review. B, Condensed matter SemiconductorsSemiconductor TechnologyElectrical EngineeringDeep LevelsQuantitative Criterion	1982	47
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy M. Siekacz, Anna Feduniewicz‐Żmuda, G. Cywiński, Journal of Crystal Growth Materials ScienceEpitaxial GrowthEngineeringPhysicsNanoelectronics	2008	41
Different Er centres in Si and their use for electroluminescent devices W. Jantsch, S. Lanzerstorfer, L. Palmetshofer, Journal of Luminescence Electrical EngineeringDifferent Er CentresEngineeringPhysicsElectroluminescent Devices	1998	38

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