Different Er centres in Si and their use for electroluminescent devices

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

Engineering, Materials Engineering, Materials Science +15

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Engineering, Materials Engineering, Materials Science +17

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

H. Ennen, Gernot S. Pomrenke, A. Axmann et al. · Applied Physics Letters · 1985 · 347 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature electroluminescence from Er-doped crystalline Si

G. Franzò, F. Priolo, S. Coffa et al. · Applied Physics Letters · 1994 · 346 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Bo Zheng, Jürgen Michel, Fang Ren et al. · Applied Physics Letters · 1994 · 334 citations

Engineering, Electrical Engineering, Materials Science +17