Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Abstract

We report the first room-temperature sharp line electroluminescence of an erbium-doped silicon light-emitting diode at λ=1.54 μm. The electroluminescence originates from an internal f-shell transition of Er3+. The wavelength and linewidth are relatively independent of temperature. The light intensity saturates at a drive current density of 5 A/cm2 due to the long excited state lifetime of Er3+. As the temperature increases from 100 K to room temperature, the light intensity decreases significantly.