L. Palmetshofer

Optically active erbium centers in silicon

H. Przybylińska, W. Jantsch, Yu. Suprun-Belevitch et al. · Physical review. B, Condensed matter · 1996 · 213 citations

Ii-vi Semiconductor, Photonics, Photonic Device +15

Damage and polymerization by ion bombardment of C60

Johann Kastner, H. Kuzmany, L. Palmetshofer · Applied Physics Letters · 1994 · 69 citations

Materials Science, Ion Implantation, Nuclear Collisions +13

Defect levels in H+-, D+-, and He+-bombarded silicon

L. Palmetshofer, J. Reisinger · Journal of Applied Physics · 1992 · 69 citations

Defect Levels, Electrical Engineering, Ion Implantation +13

Hydrogen implantation and diffusion in silicon and silicon dioxide

D. Fink, J. Krauser, D. Nagengast et al. · Applied Physics A · 1995 · 63 citations

Hydrogen Implantation, Engineering, Physics +5

On the local structure of optically active Er centers in Si

H. Przybylińska, G. Hendorfer, Martin Brückner et al. · Applied Physics Letters · 1995 · 51 citations

Optical Materials, Local Structure, Engineering +19