Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

Abstract

The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300–77 K. No electric activity of Er-containing luminescent centers was observed. The feasibility of precise control over impurity profiles in growing the p +-n-n + electroluminescent structures is demonstrated.