Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Abstract

Er, together with oxygen or fluorine as co-dopants, has been incorporated into Si during molecular beam epitaxial growth using co-evaporation of Si and Er containing compounds. The Er doping concentration using both Er2O3 and ErF3 can reach a level of ∼5×1019 cm−3 without precipitation, which is at least one order of magnitude higher than a previously reported solid solubility limit for Er in Si. Growth, structural, and luminescence characterization of these Er/O and Er/F doped Si samples are reported. In particular, 1.54 μm electroluminescence has been observed from Er/O doped Si layers at room temperature through hot electron impact excitation.