High quality AlGaN epilayers grown on sapphire using SiN interlayers

Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Balakrishnan, Tom Katona · Nature Photonics · 2008 · 1K citations

Engineering, Materials Engineering, Materials Science +14

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

Low-dislocation-density GaN from a single growth on a textured substrate

Carol I. H. Ashby, Christine C. Mitchell, Jung Han et al. · Applied Physics Letters · 2000 · 170 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Anti-Surfactant in III-Nitride Epitaxy –Quantum Dot Formation and Dislocation Termination–

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi · Japanese Journal of Applied Physics · 2000 · 166 citations

Engineering, Materials Engineering, Materials Science +17