Robert A. R. Leute

High-excitation and high-resolution photoluminescence spectra of bulk AlN

Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl et al. · Physical Review B · 2010 · 166 citations

Aluminium Nitride, Photoluminescence, Engineering +15

Three‐dimensional GaN for semipolar light emitters

Thomas Wunderer, Martin Feneberg, Frank Lipski et al. · physica status solidi (b) · 2010 · 64 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

High quality AlGaN epilayers grown on sapphire using SiN interlayers

Kamran Forghani, Martin Klein, Frank Lipski et al. · Journal of Crystal Growth · 2010 · 36 citations

Materials Engineering, Materials Science, Engineering +5

Growth and studies of Si-doped AlN layers

S. B. Thapa, J. Hertkorn, F. Scholz et al. · Journal of Crystal Growth · 2008 · 35 citations

Materials Engineering, Materials Science, Aluminium Nitride +5

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Robert A. R. Leute, Martin Feneberg, R. Sauer et al. · Applied Physics Letters · 2009 · 33 citations

Materials Science, Aluminium Nitride, Electronic Excited State +13