J. Hertkorn

Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks

J. Hertkorn, Frank Lipski, Peter Brückner et al. · Journal of Crystal Growth · 2008 · 66 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +8

Optimization of nucleation and buffer layer growth for improved GaN quality

J. Hertkorn, Peter Brückner, S. B. Thapa et al. · Journal of Crystal Growth · 2007 · 51 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

J. Bläsing, A. Krost, J. Hertkorn et al. · Journal of Applied Physics · 2009 · 44 citations

Materials Science, Wide-bandgap Semiconductor, Aluminium Nitride +15

X-ray diffuse scattering from threading dislocations in epitaxial GaN layers

M. Barchuk, V. Holý, Bojan Miljević et al. · Journal of Applied Physics · 2010 · 41 citations

Materials Science, Materials Engineering, Dislocation Densities +14

High quality AlGaN epilayers grown on sapphire using SiN interlayers

Kamran Forghani, Martin Klein, Frank Lipski et al. · Journal of Crystal Growth · 2010 · 36 citations

Materials Engineering, Materials Science, Engineering +5