J. Hertkorn

Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks

J. Hertkorn, Frank Lipski, Peter Brückner et al. · Journal of Crystal Growth · 2008 · 66 citations

Engineering, Materials Engineering, Materials Science +13

Optimization of nucleation and buffer layer growth for improved GaN quality

J. Hertkorn, Peter Brückner, S. B. Thapa et al. · Journal of Crystal Growth · 2007 · 51 citations

Engineering, Materials Engineering, Materials Science +8

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

J. Bläsing, A. Krost, J. Hertkorn et al. · Journal of Applied Physics · 2009 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

X-ray diffuse scattering from threading dislocations in epitaxial GaN layers

M. Barchuk, V. Holý, Bojan Miljević et al. · Journal of Applied Physics · 2010 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

High quality AlGaN epilayers grown on sapphire using SiN interlayers

Kamran Forghani, Martin Klein, Frank Lipski et al. · Journal of Crystal Growth · 2010 · 36 citations

Engineering, Materials Engineering, Materials Science +14