Benjamin Neuschl

High-excitation and high-resolution photoluminescence spectra of bulk AlN

Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl et al. · Physical Review B · 2010 · 166 citations

Aluminium Nitride, Photoluminescence, Engineering +15

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Rafael Dalmau, Baxter Moody, R. Schlesser et al. · Journal of The Electrochemical Society · 2011 · 126 citations

Materials Science, Materials Engineering, Aluminium Nitride +14

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

Benjamin Neuschl, K. Thonke, Martin Feneberg et al. · physica status solidi (b) · 2012 · 43 citations

Aluminium Nitride, Optical Materials, Engineering +19

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Benjamin Neuschl, K. Thonke, Martin Feneberg et al. · Applied Physics Letters · 2013 · 43 citations · Full text

Aluminium Nitride, Photoluminescence Two-electron Transitions, Engineering +17

High quality AlGaN epilayers grown on sapphire using SiN interlayers

Kamran Forghani, Martin Klein, Frank Lipski et al. · Journal of Crystal Growth · 2010 · 36 citations

Materials Engineering, Materials Science, Engineering +5