Rolled-Up Three-Dimensional Metamaterials with a Tunable Plasma Frequency in the Visible Regime

Stephan Schwaiger, Markus Bröll, Andreas Krohn, +5

Physical Review Letters

EngineeringVisible RegimeWave OpticNegative-index MetamaterialAcoustic Metamaterial +16

Implantation damage formation in a-, c- and m-plane GaN

K. Lorenz, E. Wendler, A. Redondo‐Cubero, +6

Acta Materialia

Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceImplantation Damage Formation +1

Three‐dimensional GaN for semipolar light emitters

Thomas Wunderer, Martin Feneberg, Frank Lipski, +18

physica status solidi (b)

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesPiezoelectric PolarizationSemiconductors +15

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

M. Glunk, J. Daeubler, L. Dreher, +8

Physical Review B

EngineeringMagnetic ResonanceMagnetic MaterialsMagnetoresistanceMagnetism +16

Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

W. Limmer, J. Daeubler, L. Dreher, +4

Physical Review B

EngineeringMagnetic ResonanceArbitrary Magnetization OrientationResistivity TensorMagnetic Materials +21

Controlling the Spontaneous Emission Rate of Quantum Wells in Rolled-Up Hyperbolic Metamaterials

K. Marvin Schulz, Hoan Vu, Stephan Schwaiger, +5

Physical Review Letters

EngineeringNegative-index MetamaterialMetamaterialsElectromagnetic MetamaterialsQuantum Metamaterials +14

Optical Modes Excited by Evanescent-Wave-Coupled PbS Nanocrystals in Semiconductor Microtube Bottle Resonators

Kay Dietrich, Christian Strelow, Constanze Schliehe, +7

Nano Letters

Optical MaterialsEngineeringCavity QedColloidal NanocrystalsMicro-optical Component +18

High quality AlGaN epilayers grown on sapphire using SiN interlayers

Kamran Forghani, Martin Klein, Frank Lipski, +11

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringHigh Quality AlganSurface Science +3

Planar semipolar (101¯1) GaN on (112¯3) sapphire

Stephan Schwaiger, Ilona Argut, Thomas Wunderer, +5

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsPhysics +9

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer, +10

physica status solidi (b)