Electrochemical and Solid-State Letters · 2008 · 22 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor ReliabilitySemiconductor SurfacesThermal Properties Of SemiconductorsAgglomerationAgglomeration ControlAnnealingGermanium Device MaterialsHeterostructure DevicesPower MosfetsSurface Morphology AlterationThermal Stability
In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The structure shows suppression of NiGe agglomeration and better surface morphology than the structure after a postgermanidation annealing of up to for . It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.
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Electrical characterization of germanium p-channel MOSFETs
Huiling Shang, H. Okorn-Schimdt, J. A. Ott et al. · IEEE Electron Device Letters · 2003 · 170 citations
A study of the NiSi to NiSi2 transition in the Ni–Si binary system
B.A. Julies, D. Knoesen, R. Pretoriüs et al. · Thin Solid Films · 1999 · 123 citations