Germanium Device Materials

Germanium Device Materials is a class of semiconductor materials in which germanium serves as the fundamental constituent, distinguished by its unique electronic properties and crystal structure that enable specialized applications in high-speed and optoelectronic devices.

254

Publications

11K

Citations

993

Authors

253

Institutions

Publications per year

2017–2026

32

Authors

993

  1. YN
    Yoshio Nishi

    Stanford University, United States

    7 publications · 323 citations

    7

    h-index

  2. KC
    Krishna C. Saraswat

    Stanford University, United States

    6 publications · 311 citations

    6

    h-index

  3. YY
    Yee‐Chia Yeo

    National University of Singapore, Singapore

    5 publications · 261 citations

    5

    h-index

  4. ES
    Eddy Simoen

    IMEC, Belgium

    5 publications · 184 citations

    5

    h-index

  5. AT
    Akira Toriumi

    The University of Tokyo, Japan

    5 publications · 302 citations

    5

    h-index

1–5 of 993

Venues

  1. Journal of Applied Physics

    14 publications · 463 citations

    12

    h-index

  2. Physical Review

    13 publications · 543 citations

    12

    h-index

  3. IEEE Electron Device Letters

    12 publications · 713 citations

    11

    h-index

  4. Applied Physics Letters

    13 publications · 361 citations

    11

    h-index

  5. Journal of Physics and Chemistry of Solids

    10 publications · 435 citations

    10

    h-index

1–5