IEEE Transactions on Electron Devices · 1990 · 108 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ReliabilityIntegrated Circuit DesignInterconnect TechnologySemiconductor ReliabilityAluminum InterconnectsCurrent DensityElectromigrationElectromigration ReliabilityInterconnect ModelingInterconnect ReliabilityLifetime EstimationLifetimes
A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified by experiments and significantly raise the projected lifetimes beyond the widely assumed A/sub dc/ T/J/sub rms//sup m/. The pure AC lifetimes of aluminum interconnect are experimentally found to be more than 10/sup 3/ times larger than DC lifetime for the same current density. In addition, AC stress lifetimes are observed to follow the same dependences on current magnitude and temperature, for T<300 degrees C, as the DC stress lifetime.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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