Projecting interconnect electromigration lifetime for arbitrary current waveforms

B.K. Liew, N.W. Cheung, Chenming Hu

IEEE Transactions on Electron Devices · 1990 · 108 citations · 12 references

Concepts

Abstract

A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified by experiments and significantly raise the projected lifetimes beyond the widely assumed A/sub dc/ T/J/sub rms//sup m/. The pure AC lifetimes of aluminum interconnect are experimentally found to be more than 10/sup 3/ times larger than DC lifetime for the same current density. In addition, AC stress lifetimes are observed to follow the same dependences on current magnitude and temperature, for T<300 degrees C, as the DC stress lifetime.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

12