Applied Physics Letters · 2003 · 82 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum ConfinementQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsLow-threshold Current LasersMetalorganic Chemical Vapor DepositionQuantum Well GainQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresStrained Quantum WellsThreshold Current Reduction
Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210–270 A/cm2 are measured for InGaAsN quantum-well lasers (Lcav=1000–2000 μm) with an emission wavelength of 1317 nm.
18