Jeng-Ya Yeh

Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Nelson Tansu, Jeng-Ya Yeh, L. J. Mawst · Applied Physics Letters · 2003 · 82 citations

Semiconductors, Quantum Science, Semiconductor Technology +13

High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

Nelson Tansu, Jeng-Ya Yeh, L. J. Mawst · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 77 citations

Short Wavelength Optic, Optical Materials, Engineering +24

Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm

Nelson Tansu, Jeng-Ya Yeh, L. J. Mawst · Applied Physics Letters · 2003 · 70 citations · Full text

Photonics, Quantum Science, Engineering +14

Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

Nelson Tansu, Jeng-Ya Yeh, L. J. Mawst · Applied Physics Letters · 2003 · 66 citations

Carrier Leakage Processes, Photonics, Quantum Science +13

Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal–organic chemical vapour deposition

Nelson Tansu, Jeng-Ya Yeh, L. J. Mawst · Journal of Physics Condensed Matter · 2004 · 53 citations

Wide-bandgap Semiconductor, Engineering, Laser Science +20