Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012 · 26 citations · 31 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsAtomic Layer DepositionCarrier TransportDopingSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsActivation EnergyAluminum-doped Zinc OxideCarrier GenerationDoping In Thin FilmsLow-temperature DepositionSemiconducting Oxide MaterialsThin Oxide FilmsThin Oxide Layers
Semiconducting Al-doped ZnO films were deposited by atomic layer deposition at low deposition temperatures of less than 100 °C and used to fabricate transistors. At deposition temperatures of less than 100 °C, the carrier concentrations of the Al:ZnO thin films were below 1018 cm−3, which corresponds to the transparent semiconducting oxide region. The reduced carrier concentrations at low deposition temperatures were attributed to the activation energy for carrier generation of ∼0.7 eV. The devices characteristics of the semiconducting Al:ZnO consisted of mobilities of 1.95 cm2/V s and on–off ratios of over 106. At a positive gate stress of less than 10 V, the Vth shift of the Al:ZnO after 3000 s was ∼3 V, which is almost 1 order of magnitude lower than that of ZnO thin-film transistors.
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