The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application

Closed-form expressions for interconnection delay, coupling, and crosstalk in VLSIs

T. Sakurai · IEEE Transactions on Electron Devices · 1993 · 603 citations

Engineering, Computer Engineering, Electrical Engineering +17

Copper metallization for ULSL and beyond

S. P. Murarka, Steven W. Hymes · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · 1995 · 260 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

Yoon-Hae Kim, Moo Sung Hwang, Hyeong Joon Kim et al. · Journal of Applied Physics · 2001 · 178 citations

Natural Sciences, Materials Engineering, Materials Science +16

Comparative study of SiOCH low-<i>k</i> films with varied porosity interacting with etching and cleaning plasma

Denis Shamiryan, Mikhaı̈l R. Baklanov, S. Vanhaelemeersch et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 150 citations

Natural Sciences, Materials Engineering, Materials Science +17

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi · Journal of Applied Physics · 1999 · 136 citations

Natural Sciences, Materials Engineering, Materials Science +17