Toru Tatsumi

Ge growth on Si using atomic hydrogen as a surfactant

Akira Sakai, Toru Tatsumi · Applied Physics Letters · 1994 · 236 citations

Engineering, Chemistry, Chemical Deposition +19

Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi · Journal of Applied Physics · 1995 · 164 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy

Toru Tatsumi, Hiroyuki Hirayama, Naoaki Aizaki · Applied Physics Letters · 1988 · 149 citations

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi · Journal of Applied Physics · 1999 · 136 citations

Materials Science, Materials Engineering, High Thermal Stability +14

Near-band-gap photoluminescence of Si1−<i>x</i>Ge<i>x</i> alloys grown on Si(100) by molecular beam epitaxy

Koichi Terashima, Michio Tajima, Toru Tatsumi · Applied Physics Letters · 1990 · 122 citations

Materials Science, Ii-vi Semiconductor, Optical Materials +13