Toru Tatsumi - Concepedia

Author

Toru Tatsumi

NEC (Japan)

Also Known As

Toru TATSUMI, Toru Tatsumi

138

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)

About

Toru Tatsumi is an author at NEC (Japan) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	28	59	2.4K
2	Engineering	27	53	2.3K
3	Chemical Engineering	4	4	99
4	Chemistry	3	3	278
5	Natural Sciences	1	1	236

Toru Tatsumi

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Ge growth on Si using atomic hydrogen as a surfactant Akira Sakai, Toru Tatsumi Applied Physics Letters EngineeringChemistryChemical DepositionSilicon On InsulatorNanoelectronics	1994	236
Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics Kazuhiko Endo, Toru Tatsumi Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringDielectric ConstantEngineering	1995	164
Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy Toru Tatsumi, Hiroyuki Hirayama, Naoaki Aizaki Applied Physics Letters	1988	149
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi Journal of Applied Physics Materials ScienceMaterials EngineeringHigh Thermal StabilityPlasma DepositionDielectric Constant	1999	136
Near-band-gap photoluminescence of Si1−<i>x</i>Ge<i>x</i> alloys grown on Si(100) by molecular beam epitaxy Koichi Terashima, Michio Tajima, Toru Tatsumi Applied Physics Letters Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhotoluminescence	1990	122
Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics Kazuhiko Endo, Toru Tatsumi Applied Physics Letters Materials ScienceThin Film PhysicsEngineeringElectronic MaterialsCarbon-based Material	1996	96
Selective growth condition in disilane gas source silicon molecular beam epitaxy Hiroyuki Hirayama, Toru Tatsumi, Naoaki Aizaki Applied Physics Letters Materials EngineeringMaterials ScienceSelective Growth ConditionEngineeringPhysics	1988	90
Gas source silicon molecular beam epitaxy using silane Hiroyuki Hirayama, Toru Tatsumi, Atsushi Ogura, Applied Physics Letters Materials ScienceMaterials EngineeringSelective Epitaxial GrowthEngineeringMicrofabrication	1987	83
Gas source silicon molecular beam epitaxy using disilane Hiroyuki Hirayama, Toru Tatsumi, Naoaki Aizaki Applied Physics Letters SemiconductorsMaterials ScienceGas Source Si-mbeEpitaxial GrowthEngineering	1988	80
Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces Hiroyuki Hirayama, Toru Tatsumi, Naoaki Aizaki Surface Science Materials ScienceSurface CharacterizationEngineeringElectron SpectroscopySurface Analysis	1988	74

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