Electrical characterization of feature sizes and parasitic capacitances using a single test structure

Abstract

Commonly, transistor characteristics, feature sizes, and interfaces as well as oxide quality of MOS transistors are measured on different test patterns. For short-channel devices this can lead to wrong interpretations because the various parameters strongly depend on each other. The present paper describes capacitance measurements which allow the determination of relevant parameters by using only a single multitransistor test structure. The method is very accurate and simple and can be used for device and process characterization.