A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling

Statistically independent soft breakdowns redefine oxide reliability specifications

Md Ashraful Alam, R.K. Smith, B. E. Weir et al. · 2003 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Statistics of successive breakdown events for ultra-thin gate oxides

J. Suñé, Ernest Y. Wu · 2003 · 46 citations

Engineering, Electrical Engineering, Electronic Materials +16

Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT ~ 1 mn) SiON films

B. Kaczer, R. Degraeve, Robert O’Connor et al. · 2005 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Recent trends in reliability assessment of advanced CMOS technologies

G. Groeseneken, R. Degraeve, B. Kaczer et al. · 2005 · 35 citations

Engineering, Electrical Engineering, Microelectronics +16

Explaining `Voltage-Driven' Breakdown Statistics by Accurately Modeling Leakage Current Increase in Thin SiON and SiO2/High-K Stacks

R. Degraeve, Ph. Roussel, M. Cho et al. · 2006 · 11 citations

Engineering, Electrical Engineering, Materials Science +17