Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals

Sebastian Doniach, M. Šunjić · Journal of Physics C Solid State Physics · 1970 · 2.6K citations

Natural Sciences, Physics, Metallic Materials +13

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve et al. · Journal of Applied Physics · 2001 · 772 citations

Engineering, Materials Engineering, Materials Science +17

New model for electron-impact ionization cross sections of molecules

Won Hwang, Y.-K. Kim, M. E. Rudd · The Journal of Chemical Physics · 1996 · 572 citations

Natural Sciences, Chemistry, Physics +15

Characterization of nitride coatings by XPS

I. Bertóti · Surface and Coatings Technology · 2002 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +10

Optimization of a low-stress silicon nitride process for surface-micromachining applications

P.J. French, P.M. Sarro, Rainer Mallée et al. · Sensors and Actuators A Physical · 1997 · 162 citations

Engineering, Materials Engineering, Materials Science +14