IEEE Transactions on Electron Devices · 2013 · 130 citations · 21 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsLeakage Power ReductionMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsNanotubesNanowiresQuantum TunnelingGate Leakage CurrentGate-all-around TransistorsLeakageLeakage Current ReductionNanowire TransistorsTunnel JunctionsTunneling CurrentTunneling Field-effect Transistors
To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs.
21
Physics of Semiconductor Devices
Geoffrey Pridham · Electronics and Power · 1970 · 4K citations
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch et al. · Physical Review Letters · 2004 · 880 citations